camIR

camIR targets the design and fabrication of a new generation of short wave infrared imaging sensor in which a colloidal quantum dot film is used as the absorbing layer. Compared to existing sensor based on epitaxially grown semiconductor, this strategies enable easier spectral tunability, an easier coupling to the readout circuit and as a result an eased pixel size reduction. Furthermore, compared to current materials, in the same spectral range, it reduces the energy consumption requires for the material growth. This project offers the possibility to decrease the cost of the sensor by a factor larger than 10. The main objectives of the project are (i) increased material stability, (ii) improved light matter coupling, (iii) high signal noise ratio (D*>1011 Jones for 2 µm cut off wavelength), large format of matrix (megapixel) similar to state of the art for InGaAs technology. Beyond the sensor, the project also target a full demonstrator of camera.