SIMPSSON

State-of-the-art Nano MOSFETs offer the unique possibility to observe drain-source current passing through only one isolated dopant because the active volume of such a device is extremely small –of order 2000 nm3. This permit to perform transport spectroscopy of this dopant with very high resolution, of order 100 microeV at low temperature. The energy spectrum of a dopant in this realistic environment departs strongly from the spectrum of a single dopant in an infinite host lattice. Extensive simulations taking into account this environment will be performed using a powerful atomistic tight binding method and compared with experimental data. Process and transport simulations will address the impact of a single dopant at a precise location on source-drain current at room temperature. The main outputs of the project will be a comprehensive study of the full distribution of ionization energies and excitation spectra for dopants in ultimate silicon nanodevices and its impact on device variability, a main concern for the next nodes of the CMOS roadmap. In a second step, correlations between electrons occupying different dopants (or double occupation of a single donor) will be investigated. Although extremely challenging the experimental observation of such correlations could be used to build a new function, the latch switch, which is a switch programmable by application of a previously applied large drain voltage. The simulation of correlation effects between two electrons is the natural extension of single particle calculations made in the first part of the project. It will open a large field for future devices where correlations between carriers-which are completely neglected today in the MOSFETs- will serve as new elements for low power functionalities (single or few charge manipulation), or for silicon quantum bits.