TopMemo

TopMemo project aims at studying the interactions between a Topological Insulator (TI) and a Magnetic Layer (ML) for the next generation of magnetic random-access memories (MRAM). MRAMs are non-volatile and non-destructive read out memories, and one of the best candidates for addressing the replacement of Dynamic-RAM and Static-RAM. They are based on a magnetic anisotropy energy to retain information and on the principle of magnetoresistance to retrieve it. Spin Orbit Torque (SOT) technology offers a faster switching and a larger reliability than the current commercialized Spin Transfer Torque (STT) technology. But writing by SOT is still too large and ther is a need to reduce it by a factor 3. Switching of the magnetization is achieved thanks to materials exhibiting strong spin-orbit interactions and by using the Rashba or the Spin Hall effect. Taking advantage of recently discovered topological materials, that exhibit much large larger SOT than conventional metals, the TopMemo project propose to replace the heavy metal in these structures by a TI in order to reduce writing current. By combining expertise from LAAS-CNRS on growth and CEA-Spintec on spintronic devices, TopMemo aims to integrate high quality TI on industrial substrate, to characterize their structural and transport properties, to deposit ML on top, to check their physical properties and finally to probe interactions between the TI and the ML. It will benefit from the broad and advanced expertise of the consortium in all aspects related to fabrication and characterization of TI-ML hybrid interfaces. The consortium is convinced that it will fundamentally aggregate research activities and help to build new synergies between researchers. Finally, fundamental breakthrough on the synthesis of nanoscale topological materials and devices at the state-of-the-art are expected from this multidisciplinary project.