BONNEG

This proposal addresses the two major roadblocks in the development of graphene for high-performance nano-optoelectronics, namely how to efficiently and reliably integrate them in pristine conditions in electronic devices, and how harness the exceptional properties of graphene. Specifically, proof of principle of ultra-thin body tunnel field effect transistors (UB-TFET) are proposed consisting of two-dimensional (2D) all epitaxial graphene/boron nitride heterostructures with a viable large scale integration scheme. Tunnel transistors are an efficient alternative to standard field effect transistors designs that are inefficient for graphene because of the lack of a bandgap. Importantly UB-TFET should overcome the thermal limitation of thermioic sub-threshold swing in common transistors. The TFET will be based on epitaxial graphene on SiC (epigraphene, or EG)/BN structures; the most advanced implementation will utilize the recently discovered exceptional conductance properties of epigraphene nano-ribbons that are quantized single channel ballistic conductors at room temperature. But having excellent graphene is far from having a device and the active component has to be integrated. This project is based on the fundamental realization that only (hetero)-epitaxial growth can provide the required atomic control for reliable devices. Epitaxial growth insures clean interfaces and precise orientation of the stacked layers, avoiding trapped molecules and the randomness inherent to layer transfer. However, despite this absolute requirement, very little progress has been made up to now to grow large 2D dielectric on graphene; most dielectric deposition needs chemical modification of the graphene surface for adhesion, which invariably compromises the graphene electronic performance. Hexagonal boron nitride (h-BN) layers is considered the best substrate for graphene, but only micron size BN flakes are available, making the integration tedious, unreliable and impossible at large scale. In this proposal we will grow h-BN epitaxialy on epigraphene by metalorganic vapor phase epitaxy (MOVPE). As demonstrated in preliminary work by this three-team partnership, this technique provides exceptional unmatched graphene/h-BN epitaxial interfaces as required for high performance electronics, and immediate upscaling capabilities. The SiC/EG/h-BN heterostructure will give access to graphene properties in an exceptionally reproducible and clean environment, not otherwise available. Growth conditions will be investigated to produce ultra thin h-BN on epigraphene, which have not been achieved yet. This proposal will then follow two tracks to build UB-TFETs, demonstrating proof of principle of vertical and lateral BN/EG-based FETs. Our ultimate goal is to combine ballistic epigraphene nanoribbons in tunneling devices to enable a new generation of electronic devices. This is an extremely promising alternative to the standard FET paradigm that can enable ultra-high frequency operation as well as low power operation. This project is a tight well-focused partnership between three teams with a history of highly successful collaboration and perfect complementarity: CNRS-Institut Néel (Grenoble), CNRS/ONERA-Laboratoire d’Etude des Matériaux (Châtillon), and CNRS/Georgia Institute of Technology -UMI 2958 (Metz, in collaboration with GT Atlanta). We will build up on the important milestone of epitaxial h-BN growth on EG, towards critical development including ultra-thin BN and fabrication of tunnel transistors devices. IN will be in charge of providing epigraphene, will design and realized transistor devices and perform transport measurements; the UMI team will produce the BN epitaxial film and provide basic structural study for rapid optimization of the growth process; LEM will perform advanced structural and optical studies, in particular HR-TEM studies, critical to the layer characterization of ultra thin 2D films.