OPTOSI

OPTOSI aims at demonstrating the monolithic integration of III-V optoelectronic devices on Si wafers with an emphasis toward Si photonics applications. The work programme will be based on the investigation and evaluation of the direct molecular-beam epitaxy (MBE) growth of III-V compounds onto Si substrates following two complementary routes: 1. the metamorphic, lattice-mismatched (LMM) route using an approach based on the unique strain-relaxation properties of III-Sb materials grown on highly mismatched substrates. Relaxation occurs by formation of a network of misfit dislocations confined near the interface which leads to low threading defect densities. 2. the quasi lattice-matched (QLM) route relying on GaP-based materials which can be lattice matched to the Si substrate and offer the perspective to bypass the issue of the relaxation defect formation. These III-V/Si platforms will be used as templates to grow III-Sb and GaP(As,N) based lasers in order to fully evaluate the potential of these approaches for future Si photonics. New nanostructures will be investigated in each technology in order to deeply enter into the 1.1 – 1.5 µm wavelength range, the III-Sb and GaP(N) routes approaching from the long- and short- wave range, respectively. OPTOSI brings together 4 leading French Academic Partners (IES-Montpellier, FOTON-Rennes, LPN-Marcoussis, LPCNO-Toulouse) with complementary expertises covering the fields of material sciences, device physics and device technology. One industrial research partner (3-5 lab) supplements the consortium to evaluate the results in terms of industrial perspectives. If successful, the project will offer a new route to the integration of III-V devices on Si, and it will have a large impact well beyond the Si-photonics field since it will open the way to the integration of any kind of III-V devices on Si, such as MOS transistors expected from the ITRS roadmap or high-efficiency solar cells. The importance of the field is reflected by the fact that the next “Compound Semiconductor week”, a large professional event which aims at “defining the next steps for the compound semiconductor industry”, will be dedicated to integration of III-Vs with Si (http://www.cseurope.net).