Probing and modeling of spatio-temporal potential profiles in organic field-effect transistor channels

Organic field-effect transistors are very promising candidates for application as pixel drivers in active matrix displays, in integrated circuits for contact less identification transponders, as non-volatile memory elements for solid-state data storage and as transducers of bio-molecules. However, our knowledge about their functioning and problems occurring in this is very limited. Detailed knowledge of the local potential in the transistor channel and the origin thereof is essential to develop the device physics of organic transistors. Here we propose to measure the time-dependent potential in a transistor channel directly by Scanning Kelvin force microscopy. These measurements will be confronted with theoretical device model studies that will be carried out in parallel. The final goal in this process is the manufacturing of a transistor that beats existing transistors regarding stability and that satisfies all other specifications needed for application in electronic paper.